| PART |
Description |
Maker |
| V54C3256 V54C3256804VS V54C3256404VS V54C3256404VT |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
http://
|
| K9F1208U0A-P K9F1216D0A K9F1216D0A-P K9F1216D0A-Y |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC-4R64FKE8D-840 |
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT)
|
Elpida Memory, Inc.
|
| K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AT49BV6416C |
64M bit, 2.7-Volt Page Mode Flash Memory, Bottom Boot
|
Atmel
|
| IBM13M32734BCB |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| MX23L6422 MX23L6422MC-11 MX23L6422MC-12 MX23L6422Y |
3.3 Volt 64M-BIT (4M x 16 / 2M x 32) Mask ROM with Page Mode 2M X 32 MASK PROM, 120 ns, PDSO86
|
Macronix International Co., Ltd.
|
| K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K120 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
1M x 8 bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| LRS1B12 |
64M ( X16) Flash & 64M ( X16) Flash & 32M ( X16) SCRAM & 8M (x16) SRAM
|
Sharp Microelectronics
|
| MB82DP04183C MB82DP04183C-65LWFKT MBR0520LT1G SN54 |
64M Bit (4 M word ??16 bit) Mobile Phone Application Specific Memory
64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory
Surface Mount Schottky Power Rectifier Plastic SOD?123 Package
18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS
|
Fujitsu Media Devices Limited
ONSEMI
TI
|
